[1] | Y. G. Zhang, J. X. Chen, Y. Q. Chen, M. Qi, A. Z. Li, K. Fröjdh, B. stoltz, J. Cryst. Growth 227 (2001) 329. |
[2] | S. R. Selmic, T. M. Chou, J. P. Sih, J. B. Kirk, A. Mantie, J. K. Butler, D. Bour, G.A.Evans “Design and Characterization of 1.3-µm AlGaInAs–InP Multiple-Quantum Well Lasers” IEEE JOURNAL ON SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL.7, NO.2, 2001pp. 16-19. |
[3] | S. L. Chuang, “Efficient band-structure calculations of strained quantum wells,” Phys. Rev. B, vol.43, no.12, pp.9649–9661, Apr. 1991. |
[4] | D. A. Borido and L. J. Sham, “Effective masses of holes at GaAs-Al-GaAs heterojunction,” Phys. Rev. B., vol. 31, pp. 888–892, 1985. |
[5] | P. S. Zory, Quantum Well Lasers. San Diego, CA: Academic, 1993, pp. 58–150. |
[6] | G. P. Agrawal and N. K. Dutta, Semiconductor Lasers. New York: Van Norstrand Reinhold, 1993, pp. 30–135. |
[7] | W. W. Chow, S. W. Koch, and M. Sargent, III, Semiconductor Laser Physics. New York: Springer-Verlag, 1994, pp. 35–205. |
[8] | C. G. Van de Walle, “Band lineups and deformational potentials in the model solid theory,” Phys. Rev. B, vol. 39, no. 3, pp. 1871–1883, 1989. |
[9] | S. Adachi, “Material parameters of InGaAsP and related binaries,” J. Appl. Phys., vol. 53, no. 12, pp. 8775–8793, 1982. |
[10] | J. Minch, S. H. Park, T. Keating, and S. L. Chuang, “Theory and Experiment of InGaAsP and InGaAlAsLong-Wavelength Strained Quantum-Well Lasers,” IEEE J. Quantum Electron., vol. 35, pp.771–782, 1999. |
[11] | Y.K Kuo, S.H Yen a, M.W Yao , M.L Chen, B.T Liou Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3-µm semiconductor lasers ,optics communications, 2007. |
[12] | J.C.L.Yong, J.M.Rorison, I.H.White, “1.3-µm Quantum Well InGaAsP, AlGaInAs and InGaAsN Laser Material Gain:A Theoretical Study,” IEEE J. Quantum Electron., vol. 38, pp.1553–1564, 2002. |
[13] | S. R. Chinn, P. S. Zory, and A. R. Reisinger, “A model for GRIN SCH-SQW diode lasers,” IEEE J. Quantum Electron., vol. 24, pp.2191–2213, 1988. |
[14] | A. I. Kucharska and D. J. Robbins, “Lifetime broadening in GaAs-Al-GaAs quantum well lasers,” IEEE. J. Quantum Electron., vol. 26, pp.443–448, 1990. |
[15] | L.A.Coldren and S.W.Corzin, Diode Lasers and Photonic Integrated Circuits. New York: Wiley-Interscience, 1995. |
[16] | D.Ahn,S.L.Chaung and Y.C.Chang ,“Valence Band Mixing Effects on the Gain and Refractive Index Change of quantum well lasers,” J. Appl. Phys., vol. 64, pp. 4056–4064, 1988. |
[17] | U. Menzel, A. Barwolff, D. Ackermann, R. Puchert and M. Voss, “Modeling the Temperature Dependence of Threshold current External Differential Efficiency and Lasing Wavelength in Qw Laser Diode,” Semicond.Sci.Technol, vol10, pp.1382-1392, 1995. |
[18] | J.W.Pan and J.I.Chyi, “theoretical study of the temperature dependence of 1.3-µm AlGaInAs–InP Multiple-Quantum Well Lasers,” IEEE J. Quantum Electron., vol. 32, pp.2133–2138, 1996. |
[19] | S.Seki, H.Oohashi, H.Sugiura, T.Hirono and K.Yokoyama, “Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3-µm InP-based strained layer Quantum Well Lasers,” IEEE J. Quantum Electron., vol. 32, pp.1478–1486, 1996. |
[20] | M.C.Wang, K.Kash, C.E.Za, R.Bhat and S.L.Chaung, “Measurement of nonradiative recombination rates in strained layer Quantum Well systems,” Appl. Phys.Lett, vol. 62, pp. 166–168, 1993. |
[21] | P. W. McIlroy, A. Kurobe, and Y. Uematsu, “Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers,” IEEE. J. Quantum Electron. vol. 21, pp. 1958–1963, 1985. |
[22] | H.Kaatuzian, Photonics vol.1, 3’rd edition, AKU press 2012, pp.110-157. |
[23] | V.Bahrami Yekta, H.Kaatuzian, “A Novel Investigation on Using Strain in Barriers of 1.3 μm AlGaInAs-InP Uncooled Multiple Quantum Well Lasers”, Commun. Theor. Phys. 54 529, 2010. |
[24] | T.C Peng, Y.Huang, C.Yang, K.Huang, F.Lee, C.Hu, M.Wu, and C.Ho “Low-Cost and High-Performance1.3-AlGaInAs–InP Uncooled Laser Diodes,” IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 18, NO. 12, JUNE 15, 2006. |
[25] | E. Yabnolovitch and E. O. Kane “band-structure engineering of Semiconductor Lasers for optical communications,” J.Lightwave Technol., vol.6, pp.1292–1299, 1988. |
[26] | B. Zhao and A. yariv, “Quantum Well Semiconductor Lasers,” in Semiconductor Lasers l: fundamentals, E.Kapon, Ed San Diego CA: Academic, 1999. |