American Journal of Materials Science
p-ISSN: 2162-9382 e-ISSN: 2162-8424
2014; 4(2): 103-110
doi:10.5923/j.materials.20140402.07
Levan Chkhartishvili1, 2, Ivane Murusidze3
1Department of Physics, Georgian Technical University, Tbilisi, 0175, Georgia
2Laboratory for Boron, Borides & Related Materials, Tavadze Institute of Metallurgy & Materials Science, Tbilisi, 0160, Georgia
3Institute of Applied Physics, Ilia State University, Tbilisi, 0162, Georgia
Correspondence to: Levan Chkhartishvili, Department of Physics, Georgian Technical University, Tbilisi, 0175, Georgia.
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In beta-rhombohedral boron, the promising high-temperature semiconductor especially useful as an effective thermoelectric material, it is possible to realize a non-standard mechanism of doping by introducing metal atoms at high concentrations in crystallographic voids sufficiently large to accommodate dopants with almost no lattice distortions. Doping aimed at modifying electro-physical parameters at the same time affects other properties of the material: in beta-rhombohedral boron metal dopants also serve as effective scattering centers for heat-carrying phonons. I this paper, the frequencies of atomic vibrations associated with various metal impurities accommodated in crystallographic voids characteristic for beta-rhombohedral boron lattice are calculated using an approach based on the quasi-classical approximation. These vibrational modes are found to be expected in spectral region from 1080 up to 4380 cm−1. All of them lie above the intrinsic phonon bands of beta-rhombohedral boron and, consequently, they can be attributed to localized vibrational modes. At high levels of doping, such localized vibrations can be presumed to reduce the thermal conductivity significantly improving in this way the thermoelectric figure-of-merit of beta-rhombohedral boron based materials.
Keywords: Localized atomic vibrations in crystals, Interstitial doping, Solid solutions of metals in boron
Cite this paper: Levan Chkhartishvili, Ivane Murusidze, Frequencies of Vibrations Localized on Interstitial Metal Impurities in Beta-Rhombohedral Boron Based Materials, American Journal of Materials Science, Vol. 4 No. 2, 2014, pp. 103-110. doi: 10.5923/j.materials.20140402.07.
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